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NTD6600N

ON Semiconductor
Part Number NTD6600N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Jun 6, 2010
Detailed Description NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features www.DataSheet4U.com • Source−to−Drain Diode Re...
Datasheet PDF File NTD6600N PDF File

NTD6600N
NTD6600N


Overview
NTD6600N Power MOSFET 100 V, 12 A, N−Channel, Logic Level DPAK Features www.
DataSheet4U.
com • Source−to−Drain Diode Recovery Time Comparable to a • • • Discrete Fast Recovery Diode Avalanche Energy Specified Logic Level Pb−Free Package is Available V(BR)DSS 100 V http://onsemi.
com RDS(on) TYP 118 mW @ 5.
0 V ID MAX 12 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
0 MW) Gate−to−Source Voltage − Continuous Drain Current − Continuous @ TA = 25°C Drain Current − Continuous @ TA =100°C Drain Current − Pulsed (Note 3) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 5.
0 Vdc, IL = 12 Apk, L = 1.
0 mH, RG = 25 W) Thermal Resistance − Junction to Case − Junction to Ambient (Note 1) − Junction to Ambient (Note 2) Maximum Temperature for Soldering Purposes, (1/8″ from case for 10 s) Symbol VDSS VDGR VGS ID ID IDM PD Value 100 100 ± 20 12 9.
0 44 56.
6 0.
38 1.
76 1.
28 −55 to +175 72 Unit Vdc Vdc Vdc Adc Apk W W/°C W W °C mJ 4 °C/W RqJC RqJA RqJA TL 2.
65 85 117 260 °C 1 1 2 3 4 G N−Channel D S MARKING DIAGRAMS 4 Drain DPAK CASE 369C (Surface Mounted) STYLE 2 AYWW NT 6600 4 Drain DPAK−3 CASE 369D (Straight Lead) STYLE 2 AYWW NT 6600 1 2 3 Gate Drain Source NT6600 A Y WW = Device Code = Assembly Location = Year = Work Week TJ, Tstg EAS 2 1 3 Drain Gate Source 2 3 Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.
If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1.
When surface mounted to an FR4...



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