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IXTY4N60P

IXYS
Part Number IXTY4N60P
Manufacturer IXYS
Description PolarHV Power MOSFET
Published Jun 12, 2010
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VD...
Datasheet PDF File IXTY4N60P PDF File

IXTY4N60P
IXTY4N60P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU4N60P IXTY4N60P IXTA4N60P IXTP4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 600 V 600 V 30 V 40 V TC = 25C 4 A TC = 25C, Pulse Width Limited by TJM 10 A TC = 25C OBSOLE4 TE A TC = 25C IS  IDM, VDD  VDSS, TJ  150°C IXTY4N1150060P mJ V/ns TC = 25C IXTA4N9060P W IXTP4N60P -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10.
.
6...


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