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IRF2907ZS-7PPbF

Part Number	IRF2907ZS-7PPbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Jun 12, 2010
Detailed Description	PD -www.DataSheet4U.com 97031 IRF2907ZS-7PPbF Features l l l l l Advanced Process Technology Ultra Low On-Resistance 1...
Datasheet	IRF2907ZS-7PPbF PDF File

Overview

PD -www.
DataSheet4U.
com 97031 IRF2907ZS-7PPbF Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 3.
8mΩ G S Description Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this d...

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IRF2907ZS-7PPbF HEXFET Power MOSFET - International Rectifier

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