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IXTP1R4N60P

IXYS
Part Number IXTP1R4N60P
Manufacturer IXYS
Description Power MOSFET
Published Jun 12, 2010
Detailed Description PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR V...
Datasheet PDF File IXTP1R4N60P PDF File

IXTP1R4N60P
IXTP1R4N60P

Overview
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220 Maximum Ratings 600 V 600 V 30 V 40 V 1.
4 A 2.
1 A 1.
4 A 75 mJ 10 V/ns 50 W -55 .
.
.
+150 C 150 C -55 .
.
.
+150 C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 0.
40 g 0.
35...


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