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IXTT120N15P

IXYS
Part Number IXTT120N15P
Manufacturer IXYS
Description Power MOSFET
Published Jun 16, 2010
Detailed Description PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) ...
Datasheet PDF File IXTT120N15P PDF File

IXTT120N15P
IXTT120N15P

Overview
PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P) TO-3P TO-268 Maximum Ratings 150 V 150 V ±20 V ±30 V 120 A 75 A 260 A 60 A 60 mJ 2.
0 J 10 V/ns 600 W -55 .
.
.
+175 °C 175 °C -55 .
.
.
+150 °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
5.
5 g 5.
0 g Symbol Test Conditions (T J = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min.
Typ.
Max.
150 V ...


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