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IXFC110N10P
PolarHT HiPerFET Power MOSFET
Description
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C IXFC 110N10P VDSS ID25 RDS(on) = 100 V = 66 A = 17 mΩ www.DataSheet4...
IXYS
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IXFC110N10P
PolarHT HiPerFET Power MOSFET
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