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IXFN140N20P

IXYS
Part Number IXFN140N20P
Manufacturer IXYS
Description PolarHT HiPerFET Power MOSFET
Published Jun 17, 2010
Detailed Description PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V D...
Datasheet PDF File IXFN140N20P PDF File

IXFN140N20P
IXFN140N20P

Overview
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN140N20P Symbol V DSS V DGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Test Conditions T J = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 200 V 200 V 20 V  30 V 115 A 280 A 60 A 4 J 10 V/ns 680 W -55 .
.
.
+175 C 175 C -55 .
.
.
+175 C 2500 V~ 3000 V~ 1.
5/13 1.
3/11.
5 Nm/lb.
in Nm/lb.
in 30 g Symbol Tes...


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