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NTJD4152P

ON Semiconductor
Part Number NTJD4152P
Manufacturer ON Semiconductor
Description Dual P-Channel MOSFET
Published Jun 23, 2010
Detailed Description NTJD4152P, NVJD4152P MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.88 A Features • Leadin...
Datasheet PDF File NTJD4152P PDF File

NTJD4152P
NTJD4152P

Overview
NTJD4152P, NVJD4152P MOSFET – Dual, P-Channel, Trench Small Signal, ESD Protected, SC-88 20 V, 0.
88 A Features • Leading Trench Technology for Low RDS(ON) Performance • Small Footprint Package (SC70−6 Equivalent) • ESD Protected Gate • NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These are Pb−Free Devices Applications • Load/Power Management • Charging Circuits • Load Switching • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) Steady TA = 25°C ID State TA = 85°C −0.
88 A −0.
63 Power Dissipation (Note 1) Steady TA = 25°C PD State TA = 85°C 0.
272 W 0.
141 Continuous Drain Current (Note 2) t v 5 s TA = 25°C ID TA = 85°C −1.
0 A −0.
72 Power Dissipation (Note 2) t v 5 s TA = 25°C PD TA = 85°C 0.
35 W 0.
181 Pulsed Drain Current t ≤ 10 ms IDM ±3.
0 A Operating Junction and Storage Temperature TJ, −55 to °C TSTG 150 Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) IS −0.
48 A TL 260 °C THERMAL RESISTANCE RATINGS (Note 1) Parameter Symbol Max Unit Junction−to−Ambient – Steady State RqJA 460 °C/W Junction−to−Ambient − t v 5 s RqJA 357 Junction−to−Lead – Steady State RqJL 226 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1.
Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.
127 in sq [1 oz] including traces), steady state.
www.
onsemi.
com V(BR)DSS −20 V RDS(on) Typ 215 mW @ −4.
5 V 345 mW @ −2.
5 V 600 mW @ −1.
8 V ID Max −0.
88 A S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 Top View MARKING DIAGRAM & PIN ASSI...


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