N-channel TrenchMOS intermediate level FET
Description
www.DataSheet4U.com
BUK6E3R4-40C
N-channel TrenchMOS intermediate level FET
Rev. 01 — 17 May 2010 Objective data sheet
1. Product profile
1.1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the...
Similar Datasheet
