RF Power Field Effect Transistor
Description
Freescale Semiconductor Technical Data
Document Number: MRF8P20160H www.DataSheet4U.com Rev. 0, 4/2010
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ...
Similar Datasheet
