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BLA6H1011-600

NXP
Part Number BLA6H1011-600
Manufacturer NXP
Description LDMOS avionics power transistor
Published Jun 30, 2010
Detailed Description www.DataSheet4U.com BLA6H1011-600 LDMOS avionics power transistor Rev. 01 — 22 April 2010 Product data sheet 1. Produc...
Datasheet PDF File BLA6H1011-600 PDF File

BLA6H1011-600
BLA6H1011-600

Overview
www.
DataSheet4U.
com BLA6H1011-600 LDMOS avionics power transistor Rev.
01 — 22 April 2010 Product data sheet 1.
Product profile 1.
1 General description 600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the 1030 MHz to 1090 MHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 °C; tp = 50 μs; δ = 2 %; IDq = 100 mA; in a class-AB production test circuit.
Mode of operation pulsed RF f (MHz) 1030 to 1090 VDS (V) 48 PL (W) 600 Gp (dB) 17 ηD (%) 52 tr (ns) 11 tf (ns) 5 CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features and benefits „ Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply voltage of 48 V, an IDq of 100 mA, a tp of 50 μs with δ of 2 %: ‹ Output power = 600 W ‹ Power gain = 17 dB ‹ Efficiency = 52 % „ Easy power control „ Integrated ESD protection „ High flexibility with respect to pulse formats „ Excellent rugged...


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