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NDP03N60Z

ON Semiconductor
Part Number NDP03N60Z
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jun 30, 2010
Detailed Description www.DataSheet4U.com NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • Low ON Resis...
Datasheet PDF File NDP03N60Z PDF File

NDP03N60Z
NDP03N60Z

Overview
www.
DataSheet4U.
com NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.
3 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.
com VDSS 600 V RDS(on) (TYP) @ 1.
2 A 3.
3 W ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Continuous Drain Current RqJC Continuous Drain Current RqJC TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 3.
0 A ESD (HBM) (JESD 22−A114) RMS Isolation Voltage (t = 0.
3 sec.
, R.
H.
≤ 30%, TA = 25°C) (Figure 17) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS Vesd VISO 4500 3.
0 (Note 1) 1.
9 (Note 1) 12 (Note 1) 25 NDF NDP 600 3.
0 1.
9 12 78 30 100 3000 2.
6 1.
65 10 61 NDD Unit V A A G (1) A W V mJ V V 4 4 dv/dt IS TL TJ, Tstg...


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