Freescale Semiconductor Technical Data
Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation f...
