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NTMFS4899NF

Part Number	NTMFS4899NF
Manufacturer	ON Semiconductor
Description	Power MOSFET
Published	Jul 3, 2010
Detailed Description	www.DataSheet4U.com NTMFS4899NF Power MOSFET Features 30 V, 75 A, Single N−Channel, SO−8 FL • • • • • Integrated Schot...
Datasheet	NTMFS4899NF PDF File

Overview

www.
DataSheet4U.
com NTMFS4899NF Power MOSFET Features 30 V, 75 A, Single N−Channel, SO−8 FL • • • • • Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.
com V(BR)DSS 30 V RDS(ON) MAX 5.
0 mW @ 10 V 7.
5 mW @ 4.
5 V ID MAX 75 A Applications • CPU Power Delivery • DC−DC Converters • Low Side Switching N−CHANNEL MOSFET D Unit V V A G S 30 ±20 17.
8 12.
9 PD ID PD ID PD ID PD IDM IDmaxpkg TJ, TSTG IS dV/dt EAS 2.
70 29.
1 21 7.
18 10.
4 7.
5 0.
92 75 54 48 188 90 −55 to +150 46 6 84 W A A °C A V/ns mJ NTMFS4899NFT3G W A W 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA v 10 sec Power Dissipation RqJA, t v 10 sec Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TA = 25°C TA = 85°C TA = 25°C TC = 25°C TC = 85°C TC = 25°C TA = 25°C TA = 25°C Symbol VDSS VGS ID Value W A MARKING DIAGRAM D S S S G 4899NF AYWWG G D D A SO−8 FLAT LEAD CASE 488AA STYLE 1 D A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMFS4899NFT1G Package SO−8FL (Pb−Free) SO−8FL (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel Current limited by package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, IL = 41 Apk, L = 0.
1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C †For information on tape and re...

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NTMFS4899NF Power MOSFET - ON Semiconductor

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