DatasheetsPDF.com

IXFN180N15P

IXYS
Part Number IXFN180N15P
Manufacturer IXYS
Description PolarHT HiPerFET Power MOSFET
Published Jul 5, 2010
Detailed Description www.DataSheet4U.com PolarHTTM HiPerFET IXFN 180N15P Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrin...
Datasheet PDF File IXFN180N15P PDF File

IXFN180N15P
IXFN180N15P

Overview
www.
DataSheet4U.
com PolarHTTM HiPerFET IXFN 180N15P Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS ID25 RDS(on) trr = 150 V = 150 A ≤ 11 mΩ ≤ 200 ns Symbol VDSS VDGR VDSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md VISOL TL Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 150 150 ±20 ±30 150 100 380 60 100 4 10 680 V V V V A A A A mJ J V/ns W miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal.
Mounting torque Terminal connection torque (M4) 50/60 Hz t = 1 min IISOL ≤1 mA t=1s 1.
6 mm (0.
062 in.
) from case for 10 s -55 .
.
.
+175 °C 175 °C -55 .
.
.
+150 °C 1.
5/13 Nm/lb.
in.
1.
5/13 Nm/lb.
in.
2500 V~ 3000 V~ 300 30 °C g Features • International standard package • Encapsulating epoxy meets UL 94 V-0, flammability classification isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect • miniBLOC with Aluminium nitride l l l Symbol Test Conditions (TJ = 25° C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS, VGS = 0 V TJ = 150° C Characteristic Values Min.
Typ.
Max.
150 2.
5 5.
0 ±100 25 500 11 V V nA µA µA mΩ Advantages l l l Easy to mount Space savings High power density VGS = 10 V, ID = 90 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved DS99241E(01/06) www.
DataSheet4U.
com IXFN 180N15P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min.
Typ.
Max.
55 86 7000 S pF pF pF ns ns ns ns nC nC nC 0.
22° CW 0.
05 ° C/W SOT-22...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)