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EID1414A1-5

Excelics Semiconductor
Part Number EID1414A1-5
Manufacturer Excelics Semiconductor
Description 14.00-14.50 GHz 5-Watt Internally-Matched Power FET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com EID1414A1-5 UPDATED 07/12/2007 14.00-14.50 GHz 5-Watt Internally-Matched Power FET FEATURES • • •...
Datasheet PDF File EID1414A1-5 PDF File

EID1414A1-5
EID1414A1-5

Overview
www.
DataSheet4U.
com EID1414A1-5 UPDATED 07/12/2007 14.
00-14.
50 GHz 5-Watt Internally-Matched Power FET FEATURES • • • • • • • 14.
00-14.
50 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +37.
5 dBm Output Power at 1dB Compression 7.
5 dB Power Gain at 1dB Compression 35% Power Added Efficiency Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH DESCRIPTION The EID1414A1-5 is a high power, highly linear, single stage MFET amplifier in a flange mount package.
This amplifier features Excelics’ unique PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.
00-14.
50GHz VDS = 10 V, IDSQ = 1200mA Gain at 1dB Compression f = 14.
00-14.
50GHz VDS = 10 V, IDSQ = 1200mA Gain Flatness f = 14.
00-14.
50GHz VDS = 10 V, IDSQ = 1200mA Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ = 1200mA f = 14.
00-14.
50GHz Drain Current at 1dB Compression f = 14.
00-14.
50GHz Saturated Drain Current Pinch-off Voltage Thermal Resistance2 VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 20 mA MIN 37.
0 6.
5 TYP 37.
5 7.
5 ±0.
6 35 1400 2080 -2.
5 5.
5 1800 2880 -4.
0 6.
0 o MAX UNITS dBm dB dB % mA mA V C/W Notes: 1.
Tested with 100 Ohm gate resistor.
2.
Overall Rth depends on case mounting.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc.
310 De Guigne Drive, Sunnyvale, CA 94085 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.
excelics.
com page 1 of 4 Revised July 2007 www.
DataSheet4U.
com EID1414A1-5 UPDATED 07/12/2007 14.
00-14.
50 GHz 5-Watt Internally-Matched Power FET CHARACTERISTIC VALUE 10 V -4.
5 V IDSS 40 mA @ 3dB compression 23 W 150°C -65/+150°C ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2 SYMBOL VDS VGS IDS IGSF PIN PT TCH TSTG Drain to Source Voltage Gate to Source Voltage Drain Current Forward Gate Current Input Power Total Power Dissipation Channel Temperature Storage Temperature No...


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