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EID1515-10

Part Number	EID1515-10
Manufacturer	Excelics Semiconductor
Description	15.35-15.75 GHz 10-Watt Internally Matched Power FET
Published	Jul 7, 2010
Detailed Description	www.DataSheet4U.com EID1515-10 UPDATED 12/21/2006 15.35-15.75 GHz 10-Watt Internally Matched Power FET Excelics FEATU...
Datasheet	EID1515-10 PDF File

Overview

www.
DataSheet4U.
com EID1515-10 UPDATED 12/21/2006 15.
35-15.
75 GHz 10-Watt Internally Matched Power FET Excelics FEATURES • • • • • • 15.
35– 15.
75GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +40.
0 dBm Output Power at 1dB Compression 5.
5 dB Power Gain at 1dB Compression 20% Power Added Efficiency Hermetic Metal Flange Package .
827±.
010 .
669 .
120 MIN EID1515-10 YYWW SN .
120 MIN .
024 .
421 .
125 .
508±.
008 .
442 .
168±.
010 ALL DIMENSIONS IN INCHES .
004 .
063 .
004 .
105±.
008 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH Note: 1.
Tested with 50 Ohm gate resistor.
2.
Overall Rth depends on case mounting.
Caution! ESD sensitive device.
MIN 39.
0 4.
5 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 15.
35-15.
75GHz VDS = 10 V, IDSQ ≈ 3200mA Gain at 1dB Compression f = 15.
35-15.
75GHz VDS = 10 V, IDSQ ≈ 3200mA Gain Flatness f = 15.
35-15.
75GHz VDS = 10 V, IDSQ ≈ 3200mA Power Added Efficiency at 1dB Compression f = 15.
35-15.
75GHz VDS = 10 V, IDSQ ≈ 3200mA Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 TYP 40.
0 5.
5 MAX UNITS dBm dB ±0.
6 22 3500 5000 -1.
0 2.
5 4500 7500 -2.
5 3.
0 o dB % mA mA V C/W f = 15.
35-15.
75GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 60 mA MAXIMUM RATING1,2 (Ta = 25°C) SYMBOLS PARAMETERS Drain-Source Voltage Gate-Source Voltage Forward Gate Current Reverse Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation ABSOLUTE1 15V -5V 120mA -18mA 39.
0dBm o 175 C o -65 to +175 C CONTINUOUS2 10V -3V 40mA -6mA @ 3dB Compression 175 oC -65 to +175 oC 50W VDS VGS Igsf Igsr Pin Tch Tstg Pt 50W Note: 1.
Exceeding any of the above ratings may result in permanent damage.
2.
Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc.
310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.
e...

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EID1515-10 15.35-15.75 GHz 10-Watt Internally Matched Power FET - Excelics Semiconductor

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