Dual N-Channel MOSFET
Description
NEW PRODUCT
Features
Low Gate Charge Low RDS(ON):
28mΩ @VGS = 4.5V 32mΩ @VGS = 2.5V 40mΩ @VGS = 1.8V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4)
S1
DMG9926UDM
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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