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BLF7G20LS-160P

NXP
Part Number BLF7G20LS-160P
Manufacturer NXP
Description Power LDMOS transistor
Published Jul 11, 2010
Detailed Description www.DataSheet4U.com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1...
Datasheet PDF File BLF7G20LS-160P PDF File

BLF7G20LS-160P
BLF7G20LS-160P

Overview
www.
DataSheet4U.
com BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev.
01 — 22 June 2010 Objective data sheet 1.
Product profile 1.
1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (mA) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (dB) 17.
5 18.
5 ηD (%) 57 43 ACPR400k (dBc) −61 ACPR600k (dBc) −74 EVMrms (%) 2.
5 1.
2 Features and benefits „ „ „ „ „ „ „ „ „ Excellent ruggedness High efficiency Low Rth providing excellent thermal ...


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