DatasheetsPDF.com

KU063N03Q

KEC semiconductor
Part Number KU063N03Q
Manufacturer KEC semiconductor
Description N-channel MOSFET
Published Jul 12, 2010
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KU063N03Q PDF File

KU063N03Q
KU063N03Q

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs.
It is mainly suitable for DC/DC Converter and Battery pack.
.
FEATURES VDSS=30V, ID=16A.
Drain to Source On Resistance.
RDS(ON)=6.
3m (Max.
) @ VGS=10V RDS(ON)=10.
7m (Max.
) @ VGS=4.
5V MOSFET Maximum Ratings (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain to Source Voltage Gate to Source Voltage Drain Current DC@Ta=25 Pulsed Drain Power Dissipation @Ta=25 Maximum Junction Temperature Storage Temperature Range (Note 1) (Note 1) VDSS VGSS ID IDP PD Tj Tstg 30 20 ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)