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TPC6003

Toshiba Semiconductor
Part Number TPC6003
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 19, 2010
Detailed Description TPC6003 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC A...
Datasheet PDF File TPC6003 PDF File

TPC6003
TPC6003

Overview
TPC6003 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6003 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.
) High forward transfer admittance: |Yfs| = 7 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.
3 to 2.
5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC (Note 1) Pulse (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating 30 30 ±20 6 A 24 Unit V V V ...


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