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TPCF8101

Toshiba Semiconductor
Part Number TPCF8101
Manufacturer Toshiba Semiconductor
Description MOSFET
Published Jul 19, 2010
Detailed Description www.DataSheet4U.com TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook...
Datasheet PDF File TPCF8101 PDF File

TPCF8101
TPCF8101

Overview
www.
DataSheet4U.
com TPCF8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.
) High forward transfer admittance: |Yfs| = 14 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −12 V) Enhancement model: Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −12 −12 ±8 −6 −24 2.
5 0.
7 6.
3 −3 0.
25 150 −55~150 Unit ...


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