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TPCF8A01

Part Number	TPCF8A01
Manufacturer	Toshiba Semiconductor
Description	Notebook PC Applications
Published	Jul 19, 2010
Detailed Description	TPCF8A01 www.DataSheet4U.com TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode ...
Datasheet	TPCF8A01 PDF File

Overview

TPCF8A01 www.
DataSheet4U.
com TOSHIBA Multi-Chip Device Silicon N Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8A01 Notebook PC Applications Portable Equipment Applications • • • • • Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.
) High forward transfer admittance: |Yfs| = 5.
4 S (typ.
) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement mode: Vth = 0.
5 to 1.
2 V (VDS = 10 V, ID = 200 µA) Low forward voltage: VFM(2) = 0.
46V(typ.
) Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (Note 4) Symbol VDSS VDGR VGSS ID IDP EAS IAR EAR ...

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TPCF8A01 Notebook PC Applications - Toshiba Semiconductor

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