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TJ120F06J3

Part Number	TJ120F06J3
Manufacturer	Toshiba Semiconductor
Description	P-Channel MOSFET
Published	Jul 21, 2010
Detailed Description	TJ120F06J3 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 • • • • L...
Datasheet	TJ120F06J3 PDF File

Overview

TJ120F06J3 www.
DataSheet4U.
com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TJ120F06J3 • • • • Low drain-source ON resistance: RDS (ON) = 5.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 110 S (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −60 V) Enhancement-model: Vth = −1.
5 to −3.
0 V (VDS = −10 V, ID = −1 mA) 0.
76 ± 0.
1 1.
4 ± 0.
1 2.
54 ± 0.
25 1.
1 10.
0 ± 0.
3 9.
5 ± 0.
2 1.
0 ± 0.
3 Chopper Regulator, DC-DC Converter Applications Motor Drive Applications Unit: mm 0.
4 ± 0.
1 10.
0 ± 0.
3 1.
6 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) S...

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TJ120F06J3 P-Channel MOSFET - Toshiba Semiconductor

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