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RJK0390DPA

Part Number	RJK0390DPA
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK0390DPA Silicon N Channel Power MOS FET Power Switching Features High spee...
Datasheet	RJK0390DPA PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK0390DPA Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.
5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.
7 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free      REJ03G1823-0130 Rev.
1.
30 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tch = 25C, Rg  50  3.
Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 65 260 65 30 90 60 2.
08 150 –...

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RJK0390DPA Silicon N Channel Power MOS FET - Renesas Technology

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