Silicon N Channel Power MOS FET
Description
Preliminary www.DataSheet4U.com Datasheet
RJK03E0DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.3 m typ. (at VGS = 10 V) Pb-free Halogen-free REJ03G1902-0200 Rev.2.00 Apr 06, 2010
Outline
RENESAS Package code: ...
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