Silicon N Channel Power MOS FET
Description
www.DataSheet4U.com
Datasheet
RJK03F6DNS
Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 8 V) Pb-free Halogen-free REJ03G1916-0100 Rev.1.00 Apr 21, 2010
Outline
RENESAS Package code: PWSN0008JB-A...
Similar Datasheet