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RJK6029DJA

Part Number	RJK6029DJA
Manufacturer	Renesas Technology
Description	Silicon N Channel MOS FET High Speed Power Switching
Published	Jul 23, 2010
Detailed Description	Preliminary www.DataSheet4U.com Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Lo...
Datasheet	RJK6029DJA PDF File

Overview

Preliminary www.
DataSheet4U.
com Datasheet RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 13.
5  typ.
(at ID = 0.
1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting REJ03G1895-0100 Rev.
1.
00 Jun 18, 2010 Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) D G 1.
Source 2.
Drain 3.
Gate 32 1 S Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: ...

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RJK6029DJA Silicon N Channel MOS FET High Speed Power Switching - Renesas Technology

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