2SB1340
Description
INCHANGE Semiconductor
isc Product Specification
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isc Silicon PNP Darlington Power Transistor
2SB1340
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -120V(Min) ·High DC Current Gain: hFE= 2000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD1889
APPLICATIONS ·Designed for power amplifier applications.
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ROHM Electronics
B1340 PDF File
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