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RQ1C075UN

Rohm
Part Number RQ1C075UN
Manufacturer Rohm
Description 1.5V Drive Nch MOSFET
Published Jul 27, 2010
Detailed Description www.DataSheet4U.com 1.5V Drive Nch MOSFET RQ1C075UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT8...
Datasheet PDF File RQ1C075UN PDF File

RQ1C075UN
RQ1C075UN

Overview
www.
DataSheet4U.
com 1.
5V Drive Nch MOSFET RQ1C075UN  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance.
2) High power package(TSMT8).
3) Low voltage drive(1.
5V drive).
(1) (2) (3) (4) Abbreviated symbol : XH  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RQ1C075UN Taping TR 3000   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Each terminal mounted on a ceramic board.
Symbol VDSS VGSS Limits 20 10 7.
5 Unit V V A A A A W C C (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain ∗2 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg *1 30 1 30 1.
5 150 55 to +150 *1 *2  Thermal resistance Parameter Channel to Ambient * Each terminal mounted on a ceramic board.
Symbol Rth (ch-a)* Limits 83.
3 Unit C / W www.
rohm.
com ©2010 ROHM Co.
, Ltd.
All rights reserved.
1/5 2010.
04 - Rev.
A RQ1C075UN  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min.
20 0.
3 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 7 Typ.
11 14 17 20 1400 310 210 15 50 100 85 18 3.
2 2.
9 Max.
10 1 1.
0 16 20 24 40 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=±10V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=7.
5A, VGS=4.
5V ID=7.
5A, VG...


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