DatasheetsPDF.com

DB3B

Part Number	DB3B
Manufacturer	TAITRON
Description	Bidirectional DIAC Trigger Diode
Published	Aug 4, 2010
Detailed Description	www.DataSheet4U.com Bidirectional DIAC Trigger Diode DB3B Bidirectional DIAC Trigger Diode Features • • • • • Low break...
Datasheet	DB3B PDF File

Overview

www.
DataSheet4U.
com Bidirectional DIAC Trigger Diode DB3B Bidirectional DIAC Trigger Diode Features • • • • • Low breakover current: 15µA Max.
Excellent symmetry Very low leakage current Trigger diode with a fixed voltage reference High temperature soldering guaranteed: 250°C/10s/9.
5mm lead length at 5 lbs tension DO-35 • RoHS Compliance Mechanical Data Case: Terminals: Weight: Glass Case DO-35 Plated axial leads, solderable per MIL-STD-750, method 2026 Approx.
0.
13 gram Maximum Ratings and Electrical Characteristics (T A=25ºC unless noted otherwise) Symbol Description Value VBO │+VBO│-│-VBO│ │±∆V│ VO IBO Tr IB IP Pd ITRM RthJA RthJL Breakover Voltage* Breakover Voltage Symmetry Dynamic Breakover Voltage** Output Voltage* Breakover Current* Rise Time* Leakage Current* Peak Current* Power Dissipation on Printed Circuit Repetitive Peak on-state Current Typical Thermal Resistance Min.
Typ.
Max.
30 32 34 -2 9 5 0.
3 2 15 2 10 150 2 400 150 Unit Conditions V V V V µA µs µA A mW A °C / W °C / W IBO ,C=22nF** IBO ,C=22nF** VBO and VF at 10mA See Fig.
6 (R=20Ω) C=22nF** See Fig.
5 VB=0.
5VBO Max.
See Fig.
6 (Gate) Ta=50°C tp=20µs, f=100Hz TAITRON COMPONENTS INCORPORATED www.
taitroncomponents.
com Tel: Fax: (800)-TAITRON (800)-824-8766 (800)-TAITFAX (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev.
A/DX 2007-06-04 Page 1 of 4 www.
DataSheet4U.
com Bidirectional DIAC Trigger Diode DB3B Symbol Description Value Unit Conditions TJ TSTG Operating Temperature range Storage Temperature Range -40 to + 110 -40 to + 125 °C *Electrical characteristic applicable in forward and reverse directions.
**Connected in parallel with the devices.
Typical Characteristics Curves Fig.
1-Max.
Power Dissipation Pd, Power Dissipation (mW) Fig.
2- Typical Relative Variation of VBO Ambient Temperature Ta (°C) VBO (Tj) VBO (Tj=25°C) Junction Temperature Tj (°C) ITRM, Repetitive Peak on-state Current (A) Fig.
3- Peak Pulse Current Tp (µs) Rev.
A/DX 2007-06-04 www.
taitroncomponents.
com ...

Similar Datasheet

DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs - STMicroelectronics
DB-3 Silicon Bidirectional DIAC - Semtech Corporation
DB-4 Bi-directional trigger diodes - Leshan Radio Company
DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor - ST Microelectronics
DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs - STMicroelectronics
DB-54003-470 HF to 2000 MHz Class AB Common Source - ETC
DB-54003L-175 HF to 2000 MHz Class AB Common Source - ETC
DB-54003L-175A HF to 2000 MHz Class AB Common Source - ETC
DB-54003L-470 HF to 2000 MHz Class AB Common Source - ETC
DB-54003L-512 HF to 2000 MHz Class AB Common Source - ETC

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)