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BFU725F

NXP Semiconductors
Part Number BFU725F
Manufacturer NXP Semiconductors
Description NPN wideband silicon germanium RF transistor
Published Oct 15, 2010
Detailed Description BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profi...
Datasheet PDF File BFU725F PDF File

BFU725F
BFU725F

Overview
BFU725F/N1 NPN wideband silicon germanium RF transistor Rev.
2 — 3 November 2011 Product data sheet 1.
Product profile CAUTION 1.
1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.
2 Features and benefits  Low noise high gain microwave transistor  Noise figure (NF) = 0.
7 dB at 5.
8 GHz  High maximum stable gain 27 dB at 1.
8 GHz  110 GHz fT silicon germ...


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