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BLF6G10L-40BRN

Part Number	BLF6G10L-40BRN
Manufacturer	NXP Semiconductors
Description	Power LDMOS transistor
Published	Oct 23, 2010
Detailed Description	DataSheet.in BLF6G10L-40BRN Power LDMOS transistor Rev. 01 — 9 August 2010 Preliminary data sheet 1. Product profile 1...
Datasheet	BLF6G10L-40BRN PDF File

Overview

DataSheet.
in BLF6G10L-40BRN Power LDMOS transistor Rev.
01 — 9 August 2010 Preliminary data sheet 1.
Product profile 1.
1 General description 40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.
Mode of operation 2-carrier W-CDMA[1] [1] f (MHz) 791 to 821 VDS (V) 28 PL(AV) (W) 2.
5 Gp (dB) 23.
0 ηD (%) 15.
0 ACPR (dBc) −42.
5 Test signal: 3GPP test model 1; 1 to 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be...

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BLF6G10L-40BRN Power LDMOS transistor - NXP Semiconductors

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