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R2J25953

Part Number	R2J25953
Manufacturer	Renesas Technology
Description	H-Bridge Control High Speed Power Switching
Published	Nov 8, 2010
Detailed Description	Preliminary Datasheet R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET De...
Datasheet	R2J25953 PDF File

Overview

Preliminary Datasheet R2J25953 H-Bridge Control High Speed Power Switching with Built-in Driver IC and Power MOS FET Description The R2J25953 multi-chip module incorporates high-side Pch MOS FET, low-side Nch MOS FET, and Bi-CMOS driver in a single HSOP-36 package.
R07DS0044EJ0300 Rev.
3.
00 Sep 01, 2010 Features  For Automotive application  Built-in low on state resistance MOS FET.
(Pch: 16 m Max.
, Nch: 11 m Max.
)  Pch MOS FET is adopted on the high-side, and the charge pump noise was lost.
 Built-in protection circuit of Thermal shut-down (TSD), Low Voltage Inhit (LVI), Overvoltage Detection (OVD) and Overcurrent Detection.
 Built-in diagnostic function.
 Built-in cross-conduction ...

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