DatasheetsPDF.com

RJE0605JPD

Part Number	RJE0605JPD
Manufacturer	Renesas Technology
Description	Silicon P Channel MOS FET Series Power Switching
Published	Nov 8, 2010
Detailed Description	Preliminary Datasheet RJE0605JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over tem...
Datasheet	RJE0605JPD PDF File

Overview

Preliminary Datasheet RJE0605JPD Silicon P Channel MOS FET Series Power Switching Description This FET has the over temperature shut-down capability sensing to the junction temperature.
This FET has the built-in over temperature shut-down circuit in the gate area.
And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.
.
REJ03G1803-0100 Rev.
1.
00 Apr 01, 2010 Features       Logic level operation (–6 V Gate drive).
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS(on): 58 m Typ, 75 m Max (VGS = –10 V) Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) D 4 1.
Gate 2.
Drain 3.
Source 4.
Drain G Gate Resistor Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit 1 Current Limitation...

Similar Datasheet

RJE0605JPD Silicon P Channel MOS FET Series Power Switching - Renesas Technology

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)