SSP6N70A
Description
Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.)
1 2 3
SSP6N70A
BVDSS = 700 V RDS(on) = 1.8 Ω ID = 6 A
TO-220
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symb...
Similar Datasheet
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