DatasheetsPDF.com

WTPB12A60CW

WINSEMI SEMICONDUCTOR
Part Number WTPB12A60CW
Manufacturer WINSEMI SEMICONDUCTOR
Description Sensitive Gate Bi-Directional Triode Thyristor
Published Nov 25, 2010
Detailed Description WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.M.S O...
Datasheet PDF File WTPB12A60CW PDF File

WTPB12A60CW
WTPB12A60CW

Overview
WTPB12A60CW Sensitive Gate Bi-Directional Triode Thyristor Features ■ Repetitive Peak off-State Voltage: 600V ■ R.
M.
S On-State Current(IT(RMS)=12A ■ Low on-state voltage: VTM=1.
55V(Max.
)@ IT=17A ■ High Commutation dV/dt.
General Description General purpose swithhing and phase control applications.
These devices are intended to be interfaced directly to micro-controllers, logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control, lighting control and static switching relay.
Absolute Maximum Ratings Symbol VDRM/VPRM IT(RMS) ITSM I2t PGM PG(AV) dI/dt IFGM VRGM TJ, Tstg (TJ=25℃ unless otherwise specified) Parameter Peak Repetiti...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)