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WTD8A60

WINSEMI SEMICONDUCTOR
Part Number WTD8A60
Manufacturer WINSEMI SEMICONDUCTOR
Description Sensitive Gate Triac
Published Nov 25, 2010
Detailed Description www.DataSheet.in D8 A60 WT WTD8 D8A60 Sensitive Gate Triac Features � � � � Repetitive Peak off -State Voltage:600V R.M...
Datasheet PDF File WTD8A60 PDF File

WTD8A60
WTD8A60

Overview
www.
DataSheet.
in D8 A60 WT WTD8 D8A60 Sensitive Gate Triac Features � � � � Repetitive Peak off -State Voltage:600V R.
M.
S On-State Current(IT(RMS)=8A) High Commutation dv/dt Isolation Voltage (VISO=1500V AC) General Description Sensitive gate triggering Triac is suitable for direct couplingto TTL , CMOS and application such as various logic Functions, low power AC switching applications,such as fanspeed,small light controllers and home appliance equipment.
Absolute Maximum Ratings (TJ=25℃ symbol VDRM IT(RMS) ITSM I2t PGM PG(AV) IGM VGM VISO TJ TSTG unless otherwise specified) Parameter Repetitive Peak Off-State Voltage R.
M.
S On-State Current Surge On-State Current condition Tc=89℃ One Cycle, 50Hz/60Hz, Ratings 600 8.
0 80/88 Units V A A A2s W W A V V ℃ ℃ Peak,Non-Repetitive I 2t Peak Gate Power Dissipation Average Gate Power dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown voltage(R.
M.
S.
) Operating Junction Temperature Storage Temperature A.
C 1 minute 32 5.
0 0.
5 2.
0 10 1500 -40~125 -40~150 Thermal Characteristics Symbol RθJc Parameter Thermal Resistance Junction to Case Value 3.
7 Units ℃/W Rev.
A Aug.
2010 Copyright@WinSemi Semiconductor Co.
, Ltd.
, All right reserved.
www.
DataSheet.
in A60 WTD8 D8A60 Electrical Characteristics(Tc=25℃ unless otherwise noted) Symbol IDRM Current VTM I+GT1 IIV+GT1 V-GT1 V-GT3 VGD (dv/dt)c Voltage at Commutation IH Holding Current Peak On-State Voltage Ⅰ Ⅱ Ⅲ Ⅰ Ⅱ Ⅲ Non-Trigger Gate Voltage Critical Rate of Rise Off-State TJ=125℃,VD=1/2VDRM TJ=125℃,[di/dt]c=-4.
0A/ms, VD=2/3VDRM 10 15 V/µs mA Gate Trigger Voltage VD=6V,RL=10Ω Gate Trigger Current VD=6V,RL=10Ω Items Repetitive Peak Off-State conditions VD=VDRM,Single Phase, Half Wave TJ=125℃ IT=12A,Inst.
Measurement Ratin Min 0.
2 Typ - Max 2.
0 1.
4 30 30 30 1.
5 1.
5 1.
5 - Unit mA V mA V V 2/5 Steady, all for your advance www.
DataSheet.
in A60 WTD8 D8A60 Fig1.
Gate Characteristics Fig.
2 On-State Voltage Fig.
3 On State Current vs.
Maximum Power Dissipa...


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