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WFP18N20
Silicon N-Channel MOSFET
Features
� � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest techn...
