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STD9NM50N

STMicroelectronics
Part Number STD9NM50N
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Dec 13, 2010
Detailed Description STD9NM50N Datasheet Automotive-grade N-channel 500 V, 730 mΩ typ., 11 A MDmesh II Power MOSFET in a DPAK package Featur...
Datasheet PDF File STD9NM50N PDF File

STD9NM50N
STD9NM50N


Overview
STD9NM50N Datasheet Automotive-grade N-channel 500 V, 730 mΩ typ.
, 11 A MDmesh II Power MOSFET in a DPAK package Features TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max.
ID STD9NM50N 500 V 790 mΩ 5A • AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications G(1) • Switching applications S(3) Description AM01475v1_noZen This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology.
This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high efficiency converters.
Product status link STD9NM50N Product summary Order code STD9NM50N Marking 9NM50N Package DPAK Packing Tape and reel DS8666 - Rev 2 - May 2023 For further information contact your local STMicroelectronics sales office.
www.
st.
com STD9NM50N Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) dv/dt (2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width limited by safe operating area.
2.
ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDS (peak) ≤ V(BR)DSS, VDS = 80% V(BR)DSS.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJA (1) Thermal resistance, junction-to-ambient 1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Value ±25 5 3 20 45 2 140 15 -55 to 150 Unit V A A W A mJ V/ns °C °C Value 2.
78 50 Unit °C/W °C/W DS8666 - Rev...


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