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SIHFS11N50A

Vishay Siliconix
Part Number SIHFS11N50A
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Jan 31, 2011
Detailed Description www.vishay.com IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (...
Datasheet PDF File SIHFS11N50A PDF File

SIHFS11N50A
SIHFS11N50A

Overview
www.
vishay.
com IRFS11N50A, SiHFS11N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single 0.
52 D2PAK (TO-263) D G FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Available Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current Available • Effective Coss Specified • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and/or parts that are non-RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
 Please see the information/tables in this datasheet for details.
GD S S N-Channel MOSFET APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half and Full Bridge • Power Factor Correction Boost ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHFS11N50A-GE3 IRFS11N50APbF D2PAK (TO-263) SiHFS11N50ATRR-GE3a IRFS11N50ATRRPa D2PAK (TO-263) SiHFS11N50ATRL-GE3a IRFS11N50ATRLPa ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 4.
5 mH, Rg = 25 , IAS...


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