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NTP13N10

ON Semiconductor
Part Number NTP13N10
Manufacturer ON Semiconductor
Description Power MOSFET
Published Feb 17, 2011
Detailed Description NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode...
Datasheet PDF File NTP13N10 PDF File

NTP13N10
NTP13N10

Overview
NTP13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated Temperature Pb−Free Package is Available VDSS 100 V http://onsemi.
com RDS(ON) TYP 165 mΩ @ 10 V N−Channel D ID MAX 13 A Typical Applications • PWM Motor Controls • Power Supplies • Converters MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain−to−Source Voltage Drain−to−Source Voltage (RGS = 1.
0 MΩ) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA 25°C − Continuous @ TA 100°C − Pulsed (Note 1) Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range Single Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 13 A, L = 1.
0 mH, RG = 25 Ω) Thermal Resistance − Junction−to−Case Maximum Lead Temperature for ...


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