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CHM8809JPT

Part Number	CHM8809JPT
Manufacturer	Chenmko Enterprise
Description	N-Channel Enhancement Mode Field Effect Transistor
Published	Feb 21, 2011
Detailed Description	CHENMKO ENTERPRISE CO.,LTD CHM8809JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts ...
Datasheet	CHM8809JPT PDF File

Overview

CHENMKO ENTERPRISE CO.
,LTD CHM8809JPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 15.
5 Ampere www.
DataSheet4U.
com FEATURE * Small flat package.
(SO-8 ) SO-8 4.
06 (0.
160) 3.
70 (0.
146) 8 1 * High density cell design for extremely low RDS(ON).
* Rugged and reliable.
* High saturation current capability.
CONSTRUCTION * N-Channel Enhancement 5.
00 (0.
197) 4.
69 (0.
185) 4 5 .
51 (0.
020) .
10 (0.
012) 1.
27 (0.
05)BSC 1.
75 (0.
069) 1.
35 (0.
053) .
25 (0.
010) .
05 (0.
002) .
25 (0.
010) .
17 (0.
007) 6.
20 (0.
244) 5.
80 (0.
228) CIRCUIT 8 D D D D 5 1 S S S G 4 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted CHM8809JPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V ±16 15.
5 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 50 2500 -55 to 150 -55 to 150 mW °C °C Note : 1.
Surface Mounted on FR4 Board , t <=10sec 2.
Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3.
Repetitive Rating , Pulse width linited by maximum junction temperature 4.
Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 50 °C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM8809JPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 16V,VDS = 0 V VGS = -16V, VDS = 0 V 30 1 +100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS=10V, ID=1...

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CHM8809JPT N-Channel Enhancement Mode Field Effect Transistor - Chenmko Enterprise

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