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CHM8938JPT

Part Number	CHM8938JPT
Manufacturer	Chenmko Enterprise
Description	Dual Enhancement Mode Field Effect Transistor
Published	Feb 21, 2011
Detailed Description	CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-cha...
Datasheet	CHM8938JPT PDF File

Overview

CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 30 Volts P-channel: VOLTAGE 30 Volts APPLICATION * Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM8938JPT CURRENT 7 Ampere CURRENT 6 Ampere FEATURE * Small flat package.
(SO-8 ) * Super high dense cell design for extremely low RDS(ON).
* Lead free product is acquired.
* High power and current handing capability.
1 SO-8 4.
06 (0.
160) 3.
70 (0.
146) 8 CONSTRUCTION * N-Channel & P-Channel Enhancement in the package 5.
00 (0.
197) 4.
69 (0.
185) 4 5 .
51 (0.
020) .
10 (0.
012) 1.
27 (0.
05)BSC 1.
75 (0.
069) 1.
35 (0.
053) .
25 (0.
010) .
05 (0.
002) .
25 (0.
010) .
17 (0.
007) 6.
20 (0.
244) 5.
80 (0.
228) CIRCUIT 8 D1 D1 D2 D2 5 1 4 S1 G1 S2 G2 Dimensions in millimeters SO-8 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted N-Channel P-Channel Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 -30 V V ±20 7.
0 (Note 3) ±20 -6.
0 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range A 20 2000 -55 to 150 -55 to 150 -20 mW °C °C Note : 1.
Surface Mounted on FR4 Board , t <=10sec 2.
Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3.
Repetitive Rating , Pulse width linited by maximum junction temperature 4.
Guaranteed by design , not subject to production trsting Thermal characteristics www.
DataSheet4U.
com RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.
5 °C/W 2006-02 RATING CHARACTERISTIC CURVES ( CHM8938JPT ) N-Channel Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V µA nA nA ON CHARACT...

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CHM8938JPT Dual Enhancement Mode Field Effect Transistor - Chenmko Enterprise

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