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CHM451ANZPT

Chenmko Enterprise
Part Number CHM451ANZPT
Manufacturer Chenmko Enterprise
Description N-Channel Enhancement Mode Field Effect Transistor
Published Feb 21, 2011
Detailed Description CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION...
Datasheet PDF File CHM451ANZPT PDF File

CHM451ANZPT
CHM451ANZPT

Overview
CHENMKO ENTERPRISE CO.
,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts APPLICATION * Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM451ANZPT CURRENT 7.
2 Ampere FEATURE * Small flat package.
(SC-73/SOT-223) * High density cell design for extremely low RDS(ON).
* Rugged and reliable.
6.
50+0.
20 3.
00+0.
10 SC-73/SOT-223 1.
65+0.
15 0.
90+0.
05 2.
0+0.
3 CONSTRUCTION * N-Channel Enhancement 0.
70+0.
10 0.
70+0.
10 2.
30+0.
1 3.
5+0.
2 7.
0+0.
3 0.
9+0.
2 2.
0+0.
3 0.
70+0.
10 4.
60+0.
1 0.
27+0.
05 0.
01~0.
10 1 1 Gate 3 2 CIRCUIT (1) G D (3) 2 Source 3 Drain ( Heat Sink ) S (2) Dimensions in millimeters SC-73/SOT-223 Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted CHM451ANZPT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous 30 V V ±20 7.
2 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A 25 3000 -55 to 150 -55 to 150 mW °C °C Note : 1.
Surface Mounted on FR4 Board , t <=10sec 2.
Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3.
Repetitive Rating , Pulse width linited by maximum junction temperature 4.
Guaranteed by design , not subject to production trsting Thermal characteristics www.
DataSheet4U.
com RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 42 °C/W 2006-01 RATING CHARACTERISTIC CURVES ( CHM451ANZPT ) Electrical Characteristics T Symbol Parameter A = 25°C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = 250 µA VDS = 24 V, VGS = 0 V VGS = 20V,VDS = 0 V VGS = -20V, VDS = 0 V 30 1 +100 -100 V µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VGS=10V, ID=7.
2A VGS=4.
5V, ID=6.
0A 1 27...


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