25V N-Channel MOSFET
Description
PJ04N03D
25V N-Channel Enhancement Mode Field Effect Transistor
FEATURES
RDS(ON),VGS@10V,I DS@30A=4mΩ RDS(ON),VGS@5.0V,I DS@24A=6mΩ Advanced trench process technology High Density Cell Design For Uitra Low On-Resistance Specially Designed for DC/DC Converters and Motor Drivers Fully Characterized Avalanche Voltage and Current In compliance with...
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