N-Channel MOSFET
Description
CET04N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D G SOT-223 D
S
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ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drai...
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