N-Channel MOSFET
Description
CET3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D PRELIMINARY
D G SOT-223 D
S
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Vo...
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