P-Channel MOSFET
Description
CET4301
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D
D D G SOT-223
G
S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage D...
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