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WTM2310A

Part Number	WTM2310A
Manufacturer	Weitron Technology
Description	N-Channel Enhancement Mode Power MOSFET
Published	Mar 19, 2011
Detailed Description	WTM2310A N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.0 AMPERES DRAIN SOUC...
Datasheet	WTM2310A PDF File

Overview

WTM2310A N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 1 GATE 3 DRAIN DRAIN CURRENT 5.
0 AMPERES DRAIN SOUCE VOLTAGE 60 VOLTAGE 2 SOURCE Features: * Simple Drive Requirement.
* Super High Density Cell Design for Extremely Low RDS(ON).
1 2 3 1.
GATE 2.
DRAIN 3.
SOURCE SOT-89 Maximum Ratings (TA=25°C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Total Power Dissipation (T A =25°C ) Maximum Junction-Ambient 3 Operating Junction Temperature Range Storage Temperature Range Note 1.
Pulse width limited by Max.
junction temperature.
2.
Pulse width ≤ 300us, duty cycle ≤ 2%.
3.
Surface mounted on FR4 board, t ≤10sec.
www.
DataSheet4U.
com Symbol V DS VG S TA=25°C TA=70°C ID IDM PD R θJA TJ Tstg Value 60 ±20 5.
0 4.
0 10 1.
50 83.
3 -55~+150 -55~+150 Unit V V A A W °C/W °C °C Device Marking WTM2310A = 2310A WEITRON http://www.
weitron.
com.
tw 1/5 04-Feb-10 WTM2310A Electrical Characteristics (Tj = 25 P...

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WTM2310A N-Channel Enhancement Mode Power MOSFET - Weitron Technology

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